Static negative resistance in calculated MESFET drain characteristics
Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial me...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 1980-03, Vol.27 (3), p.570-572 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 572 |
|---|---|
| container_issue | 3 |
| container_start_page | 570 |
| container_title | IEEE transactions on electron devices |
| container_volume | 27 |
| creator | Norton, D.E. Hayes, R.E. |
| description | Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial mesh size used in the calculation. A criterion for choosing a sufficiently small mesh size is given. |
| doi_str_mv | 10.1109/T-ED.1980.19900 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1480693</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1480693</ieee_id><sourcerecordid>28623915</sourcerecordid><originalsourceid>FETCH-LOGICAL-c290t-2486e1d3aa6b422405784cc81adc7389f1956b1ce8e872c0ac998a57b92df2e73</originalsourceid><addsrcrecordid>eNpFkDtPwzAUhS0EEqUwM7BkYkvrVxx7RG14SEUMLbN1e3MDQWla7BSJf49LkZiOztV37vAxdi34RAjupqu8mk-Es6k6x_kJG4miKHNntDllI86FzZ2y6pxdxPiRqtFajli1HGBoMevpLeUXZYFiGwfokbK2zxA63HcwUJ09V8v7apXVAQ73dwiAA4XEthgv2VkDXaSrvxyz18TOHvPFy8PT7G6Ro3R8yKW2hkStAMxaS6l5UVqNaAXUWCrrGuEKsxZIlmwpkQM6Z6Eo107WjaRSjdnt8e8ubD_3FAe_aSNS10FP23300hqpnCgSOD2CGLYxBmr8LrQbCN9ecH_Q5Ve-mvuDLv-rKy1ujouWiP5pbblxSv0ApiVl8g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28623915</pqid></control><display><type>article</type><title>Static negative resistance in calculated MESFET drain characteristics</title><source>IEEE Electronic Library (IEL)</source><creator>Norton, D.E. ; Hayes, R.E.</creator><creatorcontrib>Norton, D.E. ; Hayes, R.E.</creatorcontrib><description>Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial mesh size used in the calculation. A criterion for choosing a sufficiently small mesh size is given.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1980.19900</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1980-03, Vol.27 (3), p.570-572</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c290t-2486e1d3aa6b422405784cc81adc7389f1956b1ce8e872c0ac998a57b92df2e73</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1480693$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1480693$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Norton, D.E.</creatorcontrib><creatorcontrib>Hayes, R.E.</creatorcontrib><title>Static negative resistance in calculated MESFET drain characteristics</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial mesh size used in the calculation. A criterion for choosing a sufficiently small mesh size is given.</description><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNpFkDtPwzAUhS0EEqUwM7BkYkvrVxx7RG14SEUMLbN1e3MDQWla7BSJf49LkZiOztV37vAxdi34RAjupqu8mk-Es6k6x_kJG4miKHNntDllI86FzZ2y6pxdxPiRqtFajli1HGBoMevpLeUXZYFiGwfokbK2zxA63HcwUJ09V8v7apXVAQ73dwiAA4XEthgv2VkDXaSrvxyz18TOHvPFy8PT7G6Ro3R8yKW2hkStAMxaS6l5UVqNaAXUWCrrGuEKsxZIlmwpkQM6Z6Eo107WjaRSjdnt8e8ubD_3FAe_aSNS10FP23300hqpnCgSOD2CGLYxBmr8LrQbCN9ecH_Q5Ve-mvuDLv-rKy1ujouWiP5pbblxSv0ApiVl8g</recordid><startdate>19800301</startdate><enddate>19800301</enddate><creator>Norton, D.E.</creator><creator>Hayes, R.E.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19800301</creationdate><title>Static negative resistance in calculated MESFET drain characteristics</title><author>Norton, D.E. ; Hayes, R.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c290t-2486e1d3aa6b422405784cc81adc7389f1956b1ce8e872c0ac998a57b92df2e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Norton, D.E.</creatorcontrib><creatorcontrib>Hayes, R.E.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Norton, D.E.</au><au>Hayes, R.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Static negative resistance in calculated MESFET drain characteristics</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1980-03-01</date><risdate>1980</risdate><volume>27</volume><issue>3</issue><spage>570</spage><epage>572</epage><pages>570-572</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial mesh size used in the calculation. A criterion for choosing a sufficiently small mesh size is given.</abstract><pub>IEEE</pub><doi>10.1109/T-ED.1980.19900</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1980-03, Vol.27 (3), p.570-572 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_1480693 |
| source | IEEE Electronic Library (IEL) |
| title | Static negative resistance in calculated MESFET drain characteristics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T12%3A38%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Static%20negative%20resistance%20in%20calculated%20MESFET%20drain%20characteristics&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Norton,%20D.E.&rft.date=1980-03-01&rft.volume=27&rft.issue=3&rft.spage=570&rft.epage=572&rft.pages=570-572&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1980.19900&rft_dat=%3Cproquest_RIE%3E28623915%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28623915&rft_id=info:pmid/&rft_ieee_id=1480693&rfr_iscdi=true |