Static negative resistance in calculated MESFET drain characteristics

Static negative resistance in calculated MESFET drain characteristics

Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial me...

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Veröffentlicht in:IEEE transactions on electron devices 1980-03, Vol.27 (3), p.570-572
Hauptverfasser: Norton, D.E., Hayes, R.E.
Format: Artikel
Sprache:eng
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Zusammenfassung:Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial mesh size used in the calculation. A criterion for choosing a sufficiently small mesh size is given.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1980.19900