Auger depth profiling of MNOS structures by ion sputtering

Auger electron spectroscopy has been used in conjunction with argon-ion sputtering to study the morphology and chemical nature of MNOS structures. We find that a typical thin "oxide" in a memory device is a silicon oxynitride with about equal parts nitrogen and oxygen. The transition from...

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Veröffentlicht in:IEEE transactions on electron devices 1977-05, Vol.24 (5), p.547-551
Hauptverfasser: Johannessen, J.S., Helms, C.R., Spicer, W.E., Strausser, Y.E.
Format: Artikel
Sprache:eng
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Zusammenfassung:Auger electron spectroscopy has been used in conjunction with argon-ion sputtering to study the morphology and chemical nature of MNOS structures. We find that a typical thin "oxide" in a memory device is a silicon oxynitride with about equal parts nitrogen and oxygen. The transition from nitride to "oxide" to silicon is a smooth one, with an oxide width of about 2.5-nm FWHM.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1977.18776