Auger depth profiling of MNOS structures by ion sputtering
Auger electron spectroscopy has been used in conjunction with argon-ion sputtering to study the morphology and chemical nature of MNOS structures. We find that a typical thin "oxide" in a memory device is a silicon oxynitride with about equal parts nitrogen and oxygen. The transition from...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 1977-05, Vol.24 (5), p.547-551 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Auger electron spectroscopy has been used in conjunction with argon-ion sputtering to study the morphology and chemical nature of MNOS structures. We find that a typical thin "oxide" in a memory device is a silicon oxynitride with about equal parts nitrogen and oxygen. The transition from nitride to "oxide" to silicon is a smooth one, with an oxide width of about 2.5-nm FWHM. |
---|---|
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1977.18776 |