Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates

Results of a two-dimensional finite-element simulation of a GaAs MESFET are presented. The simulation is used to determine the drain current and transconductance as well as the two-dimensional voltage, electron density, and electric-field distributions. It is shown that placement of a compensated do...

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Veröffentlicht in:IEEE transactions on electron devices 1976-09, Vol.23 (9), p.1042-1048
Hauptverfasser: Barnes, J.J., Lomax, R.J., Haddad, G.I.
Format: Artikel
Sprache:eng
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Zusammenfassung:Results of a two-dimensional finite-element simulation of a GaAs MESFET are presented. The simulation is used to determine the drain current and transconductance as well as the two-dimensional voltage, electron density, and electric-field distributions. It is shown that placement of a compensated doping region in the high electric-field region between gate and drain increases the drain current and transconductance by reducing the velocity-saturation effect. The transconductance and drain conductance of the MESFET in the saturation region of devices having different channel heights are compared with previous analysis.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1976.18533