Fabrication and performance of GaAs p+n junction and Schottky barrier millimeter IMPATT's
A recently developed procedure, incorporating both preferential electrochemical etching for wafer thinning and electroplating for heat sink formation has been applied to the fabrication of K a band (26.5-40 GHz) GaAs IMPATT's. Both epitaxially grown GaAs p + n junction and Cr Schottky barrier d...
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| Veröffentlicht in: | IEEE transactions on electron devices 1974-01, Vol.21 (1), p.25-31 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | A recently developed procedure, incorporating both preferential electrochemical etching for wafer thinning and electroplating for heat sink formation has been applied to the fabrication of K a band (26.5-40 GHz) GaAs IMPATT's. Both epitaxially grown GaAs p + n junction and Cr Schottky barrier diodes have been fabricated. This procedure makes possible the batch fabrication of small area diodes ( |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1974.17857 |