Effect of magnetic field on the performance of millimeter-wave detectors using bulk InSb
The performance of microwave-biased millimeter-wave detectors using bulk InSb in the presence of a magnetic field is described. Broad-band transitions between the impurity and conduction bands together with free-carrier absorption are responsible for the detection mechanism. The performance of the d...
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| Veröffentlicht in: | IEEE transactions on electron devices 1972-09, Vol.19 (9), p.1061-1063 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | The performance of microwave-biased millimeter-wave detectors using bulk InSb in the presence of a magnetic field is described. Broad-band transitions between the impurity and conduction bands together with free-carrier absorption are responsible for the detection mechanism. The performance of the device is examined as a function of the magnetic field, millimeter-wave signal, and microwave bias levels. The results show that the performance can be improved by proper choice of the magnetic field. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1972.17545 |