Transit-time negative conductance in GaAs bulk-effect diodes
It is well known that GaAs bulk-effect devices generate RF power by velocity-modulating the charge carriers. We have found through a small-signal analysis and computer simulations that RF power could also be generated by density modulation of the carriers if the diode is subcritically doped ( n_{0}L
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| Veröffentlicht in: | IEEE transactions on electron devices 1971-02, Vol.18 (2), p.88-93 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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