Transit-time negative conductance in GaAs bulk-effect diodes

It is well known that GaAs bulk-effect devices generate RF power by velocity-modulating the charge carriers. We have found through a small-signal analysis and computer simulations that RF power could also be generated by density modulation of the carriers if the diode is subcritically doped ( n_{0}L

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Veröffentlicht in:IEEE transactions on electron devices 1971-02, Vol.18 (2), p.88-93
Hauptverfasser: Se Puan Yu, Tantraporn, W., Young, J.D.
Format: Artikel
Sprache:eng
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Zusammenfassung:It is well known that GaAs bulk-effect devices generate RF power by velocity-modulating the charge carriers. We have found through a small-signal analysis and computer simulations that RF power could also be generated by density modulation of the carriers if the diode is subcritically doped ( n_{0}L
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1971.17154