Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE
Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has be...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 475 |
|---|---|
| container_issue | |
| container_start_page | 472 |
| container_title | |
| container_volume | |
| creator | Moerman, I. Coudenys, G. Demeester, P. Crawley, J. |
| description | Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.< > |
| doi_str_mv | 10.1109/ICIPRM.1991.147415 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_147415</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>147415</ieee_id><sourcerecordid>147415</sourcerecordid><originalsourceid>FETCH-LOGICAL-i87t-a559450471169d3a5bd65c86c5a05f1696777bdb8f4aed76ebf1a9e6b7615d1c3</originalsourceid><addsrcrecordid>eNotj99qwjAYxQNjsM35Al7lBVrz2fxpLqU4V1BahuxWvjbpzNC0JJWxPf0Kem5-cDgcziFkASwFYHpZFmX9sU9Ba0iBKw7igbywXGm-kiuZP5F5jN9sEhdMAXsmVXHCgO1og_vD0fWe9h0tfb0s_RbX8Y6aXqPzXxTHSx-H0xRuKXpDz_0PHYKN8Ros3Vef9eaVPHZ4jnZ-54wc3jaH4j3ZVduyWO8Sl6sxQSH0tIArAKlNhqIxUrS5bAUy0U2eVEo1psk7jtYoaZsOUFvZKAnCQJvNyOJW66y1xyG4C4bf4-1x9g8vZUw8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Moerman, I. ; Coudenys, G. ; Demeester, P. ; Crawley, J.</creator><creatorcontrib>Moerman, I. ; Coudenys, G. ; Demeester, P. ; Crawley, J.</creatorcontrib><description>Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.< ></description><identifier>ISBN: 0879426268</identifier><identifier>ISBN: 9780879426262</identifier><identifier>DOI: 10.1109/ICIPRM.1991.147415</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atmospheric waves ; Doping ; Epitaxial growth ; Epitaxial layers ; Indium gallium arsenide ; Indium phosphide ; Inductors ; Photoluminescence ; Photonic integrated circuits ; Surface morphology</subject><ispartof>[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991, p.472-475</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/147415$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2057,4049,4050,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/147415$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Moerman, I.</creatorcontrib><creatorcontrib>Coudenys, G.</creatorcontrib><creatorcontrib>Demeester, P.</creatorcontrib><creatorcontrib>Crawley, J.</creatorcontrib><title>Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE</title><title>[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials</title><addtitle>ICIPRM</addtitle><description>Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.< ></description><subject>Atmospheric waves</subject><subject>Doping</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Inductors</subject><subject>Photoluminescence</subject><subject>Photonic integrated circuits</subject><subject>Surface morphology</subject><isbn>0879426268</isbn><isbn>9780879426262</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj99qwjAYxQNjsM35Al7lBVrz2fxpLqU4V1BahuxWvjbpzNC0JJWxPf0Kem5-cDgcziFkASwFYHpZFmX9sU9Ba0iBKw7igbywXGm-kiuZP5F5jN9sEhdMAXsmVXHCgO1og_vD0fWe9h0tfb0s_RbX8Y6aXqPzXxTHSx-H0xRuKXpDz_0PHYKN8Ros3Vef9eaVPHZ4jnZ-54wc3jaH4j3ZVduyWO8Sl6sxQSH0tIArAKlNhqIxUrS5bAUy0U2eVEo1psk7jtYoaZsOUFvZKAnCQJvNyOJW66y1xyG4C4bf4-1x9g8vZUw8</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Moerman, I.</creator><creator>Coudenys, G.</creator><creator>Demeester, P.</creator><creator>Crawley, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE</title><author>Moerman, I. ; Coudenys, G. ; Demeester, P. ; Crawley, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-a559450471169d3a5bd65c86c5a05f1696777bdb8f4aed76ebf1a9e6b7615d1c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Atmospheric waves</topic><topic>Doping</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Inductors</topic><topic>Photoluminescence</topic><topic>Photonic integrated circuits</topic><topic>Surface morphology</topic><toplevel>online_resources</toplevel><creatorcontrib>Moerman, I.</creatorcontrib><creatorcontrib>Coudenys, G.</creatorcontrib><creatorcontrib>Demeester, P.</creatorcontrib><creatorcontrib>Crawley, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Moerman, I.</au><au>Coudenys, G.</au><au>Demeester, P.</au><au>Crawley, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE</atitle><btitle>[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials</btitle><stitle>ICIPRM</stitle><date>1991</date><risdate>1991</risdate><spage>472</spage><epage>475</epage><pages>472-475</pages><isbn>0879426268</isbn><isbn>9780879426262</isbn><abstract>Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.< ></abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.1991.147415</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0879426268 |
| ispartof | [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991, p.472-475 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_147415 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atmospheric waves Doping Epitaxial growth Epitaxial layers Indium gallium arsenide Indium phosphide Inductors Photoluminescence Photonic integrated circuits Surface morphology |
| title | Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T17%3A30%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Characterization%20of%20InP/InGaAs/InGaAsP%20using%20atmospheric%20and%20low%20pressure%20MOVPE&rft.btitle=%5BProceedings%201991%5D%20Third%20International%20Conference%20Indium%20Phosphide%20and%20Related%20Materials&rft.au=Moerman,%20I.&rft.date=1991&rft.spage=472&rft.epage=475&rft.pages=472-475&rft.isbn=0879426268&rft.isbn_list=9780879426262&rft_id=info:doi/10.1109/ICIPRM.1991.147415&rft_dat=%3Cieee_6IE%3E147415%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=147415&rfr_iscdi=true |