Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE

Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE

Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has be...

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Bibliographische Detailangaben
Hauptverfasser: Moerman, I., Coudenys, G., Demeester, P., Crawley, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atmospheric waves
Doping
Epitaxial growth
Epitaxial layers
Indium gallium arsenide
Indium phosphide
Inductors
Photoluminescence
Photonic integrated circuits
Surface morphology
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Zusammenfassung:Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.< >
DOI:10.1109/ICIPRM.1991.147415