Hydrogen-induced surface space-charge regions in oxide-protected silicon

This paper presents data on the effects of hydrogen heat treatments on oxide-protected silicon. The test vehicle is a metal-oxide-semiconductor (MOS) transistor with its metal gate electrode not yet attached. The device was exposed to a hydrogen-containing atmosphere for various times and temperatures, and the resultant channel resistances were monitored. These resistances were then normalized to sheet resistivities. The experimental techniques and some of the problems encountered are discussed, as well as early application of the data to MOS and bipolar devices.