Ku-band power amplifier using pseudomorphic HEMT devices for improved efficiency

Ku-band power amplifier using pseudomorphic HEMT devices for improved efficiency

A two-stage Ku-band power amplifier demonstrating state-of-the-art power gain and efficiency has been developed using 0.25 mu m gate-length, 1600 mu m gate-width double-heterojunction pseudomorphic HEMT (high electron mobility transistor) devices. At 12 GHz, output powers of 2.2 and 2.7 watts have b...

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Bibliographische Detailangaben
Hauptverfasser: Helms, D., Komiak, J.K., Kopp, W.F., Ho, P., Smith, P.M., Smith, R.P., Hogue, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Electron mobility
Frequency
HEMTs
MESFETs
Phased arrays
PHEMTs
Power amplifiers
Power generation
Resists
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Zusammenfassung:A two-stage Ku-band power amplifier demonstrating state-of-the-art power gain and efficiency has been developed using 0.25 mu m gate-length, 1600 mu m gate-width double-heterojunction pseudomorphic HEMT (high electron mobility transistor) devices. At 12 GHz, output powers of 2.2 and 2.7 watts have been achieved, with power-added efficiencies of 39% and 36% respectively. An associated gain of 14 dB has been demonstrated.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1991.147132