Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier

Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier

The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current...

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Bibliographische Detailangaben
Hauptverfasser: Ohmuro, K., Fujishiro, H.I., Itoh, M., Nakamura, H., Nishi, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Carrier confinement
Dry etching
Electrodes
FETs
HEMTs
Low-noise amplifiers
PHEMTs
Semiconductor device noise
Voltage
Wet etching
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Zusammenfassung:The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1991.147102