Theory and experiment for the HEMTs under optical illumination

Theory and experiment for the HEMTs under optical illumination

Theoretical and experimental investigations of the DC and RF performance of depletion mode Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMTs (high electron mobility transistors) under optical illumination are presented. The photoconductive effect which increases the two-dimensional electron gas (2-DEG) channel el...

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Bibliographische Detailangaben
Hauptverfasser: Romero, M.A., Cunha, A.L.A., de Salles, A.A.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electron optics
Gallium arsenide
HEMTs
Lighting
MODFETs
Optical tuning
Photoconductivity
Photovoltaic effects
Radio frequency
Stimulated emission
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Beschreibung
Zusammenfassung:Theoretical and experimental investigations of the DC and RF performance of depletion mode Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMTs (high electron mobility transistors) under optical illumination are presented. The photoconductive effect which increases the two-dimensional electron gas (2-DEG) channel electron concentration and the photovoltaic effect in the gate junction are considered. The optical tuning of a 2-GHz HEMT oscillator and the optical control of the gain of a 2-6 GHz HEMT amplifier are presented, and potential applications are described.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1991.147045