A wide-band 0.5 /spl mu/m CMOS low-noise amplifier

A wide-band 0.5 /spl mu/m CMOS low-noise amplifier

A wide-band low-noise amplifier designed in 0.5 /spl mu/m CMOS process is discussed in this paper. Simulation results show that this low-noise amplifier is able to achieve a very wide bandwidth from 70 MHz to 1.6 GHz, with the maximum gain of 12.4 dB, and NF below 2 dB. In addition, compared to othe...

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Bibliographische Detailangaben
Hauptverfasser: Lo, I., Yo, D.A., Cheung, K., Lubecke, V.M., Boric-Lubecke, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Broadband amplifiers
Frequency
Gain
Impedance matching
Low-noise amplifiers
MOS devices
Noise figure
Noise measurement
Resistors
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Beschreibung
Zusammenfassung:A wide-band low-noise amplifier designed in 0.5 /spl mu/m CMOS process is discussed in this paper. Simulation results show that this low-noise amplifier is able to achieve a very wide bandwidth from 70 MHz to 1.6 GHz, with the maximum gain of 12.4 dB, and NF below 2 dB. In addition, compared to other known CMOS wide-band topologies, this low-noise amplifier has a better linearity with its 1 dB compression point at 0.5 dBm.
DOI:10.1109/WCACEM.2005.1469699