Low cost etchant for Ta-based copper barrier

In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH/sub 4/OH) + hydrogen peroxide (H/sub 2/O/sub 2/) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H/sub 2/O/sub 2/) and their appropriate concentration/combination i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gabunas, C.B., Abitan, F.F., Stierman, R.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bonding Copper Costs Dielectric materials Etching Inspection Laboratories Semiconductor device packaging Silicon Temperature
Online-Zugang:	Volltext bestellen
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