Low cost etchant for Ta-based copper barrier

Low cost etchant for Ta-based copper barrier

In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH/sub 4/OH) + hydrogen peroxide (H/sub 2/O/sub 2/) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H/sub 2/O/sub 2/) and their appropriate concentration/combination i...

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Bibliographische Detailangaben
Hauptverfasser: Gabunas, C.B., Abitan, F.F., Stierman, R.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bonding
Copper
Costs
Dielectric materials
Etching
Inspection
Laboratories
Semiconductor device packaging
Silicon
Temperature
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Beschreibung
Zusammenfassung:In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH/sub 4/OH) + hydrogen peroxide (H/sub 2/O/sub 2/) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H/sub 2/O/sub 2/) and their appropriate concentration/combination is presented with recommended etching parameters.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2005.1469142