Low cost etchant for Ta-based copper barrier
In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH/sub 4/OH) + hydrogen peroxide (H/sub 2/O/sub 2/) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H/sub 2/O/sub 2/) and their appropriate concentration/combination i...
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| creator | Gabunas, C.B. Abitan, F.F. Stierman, R.J. |
| description | In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH/sub 4/OH) + hydrogen peroxide (H/sub 2/O/sub 2/) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H/sub 2/O/sub 2/) and their appropriate concentration/combination is presented with recommended etching parameters. |
| doi_str_mv | 10.1109/IPFA.2005.1469142 |
| format | Conference Proceeding |
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IPFA 2005</title><addtitle>IPFA</addtitle><description>In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH/sub 4/OH) + hydrogen peroxide (H/sub 2/O/sub 2/) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H/sub 2/O/sub 2/) and their appropriate concentration/combination is presented with recommended etching parameters.</description><subject>Bonding</subject><subject>Copper</subject><subject>Costs</subject><subject>Dielectric materials</subject><subject>Etching</subject><subject>Inspection</subject><subject>Laboratories</subject><subject>Semiconductor device packaging</subject><subject>Silicon</subject><subject>Temperature</subject><issn>1946-1542</issn><issn>1946-1550</issn><isbn>9780780393011</isbn><isbn>0780393015</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9j81Kw0AUhQetYGnzAOImD2DivfOTySxLsbUQ0EX25SZzByNqwkxAfHsDFg8fnMUHB44QdwglIrjH0-thV0oAU6KuHGp5JdbodFWgMXAtMmdrWFBOAeLq32l5K7KU3mGJcqau5Vo8NON33o9pznnu3-hrzsMY85aKjhL7xUwTx7yjGAeOW3ET6CNxdumNaA9P7f65aF6Op_2uKQYEMxceKXRcoWQIxEC1cgBWsQJw6IPprOltb1wVPAASsF2ENsEGNgRebcT93-zAzOcpDp8Uf86Xq-oXRm1DyA</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Gabunas, C.B.</creator><creator>Abitan, F.F.</creator><creator>Stierman, R.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Low cost etchant for Ta-based copper barrier</title><author>Gabunas, C.B. ; Abitan, F.F. ; Stierman, R.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-d1afbe612e0fae0a8390073e30091df5b75c7c596fd001a0e700945f7fe5a0d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Bonding</topic><topic>Copper</topic><topic>Costs</topic><topic>Dielectric materials</topic><topic>Etching</topic><topic>Inspection</topic><topic>Laboratories</topic><topic>Semiconductor device packaging</topic><topic>Silicon</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Gabunas, C.B.</creatorcontrib><creatorcontrib>Abitan, F.F.</creatorcontrib><creatorcontrib>Stierman, R.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gabunas, C.B.</au><au>Abitan, F.F.</au><au>Stierman, R.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low cost etchant for Ta-based copper barrier</atitle><btitle>Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005</btitle><stitle>IPFA</stitle><date>2005</date><risdate>2005</risdate><spage>114</spage><epage>117</epage><pages>114-117</pages><issn>1946-1542</issn><eissn>1946-1550</eissn><isbn>9780780393011</isbn><isbn>0780393015</isbn><abstract>In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH/sub 4/OH) + hydrogen peroxide (H/sub 2/O/sub 2/) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H/sub 2/O/sub 2/) and their appropriate concentration/combination is presented with recommended etching parameters.</abstract><pub>IEEE</pub><doi>10.1109/IPFA.2005.1469142</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1946-1542 |
| ispartof | Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005, 2005, p.114-117 |
| issn | 1946-1542 1946-1550 |
| language | eng |
| recordid | cdi_ieee_primary_1469142 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bonding Copper Costs Dielectric materials Etching Inspection Laboratories Semiconductor device packaging Silicon Temperature |
| title | Low cost etchant for Ta-based copper barrier |
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