Euv system optimization and advanced lithography research at Lawrence Berkeley National Laboratory

Euv system optimization and advanced lithography research at Lawrence Berkeley National Laboratory

Worldwide, the focus of developmental EUV lithography has shifted to higher NA, higher resolution tools such as the 0.3-NA Micro Exposure Tool (MET). Diffractionlimited EUV optical systems, operating at 13.5-nm wavelength with 0.3-NA, have a Rayleigh resolution of 27-nm, and can print features as sm...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Goldberg, K.A., Naulleau, P.P., Denham, P.E., Rekawa, S.B., Jackson, K.H., Anderson, E.H., Liddle, J.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Focusing
Interferometric lithography
Laboratories
Lighting
Optical feedback
Optical interferometry
Printing
Resists
System testing
Ultraviolet sources
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Worldwide, the focus of developmental EUV lithography has shifted to higher NA, higher resolution tools such as the 0.3-NA Micro Exposure Tool (MET). Diffractionlimited EUV optical systems, operating at 13.5-nm wavelength with 0.3-NA, have a Rayleigh resolution of 27-nm, and can print features as small as 12 nm under special illumination conditions.
DOI:10.1109/IMNC.2004.245698