Low noise RF MOSFETs on flexible plastic substrates

We report a low minimum noise figure (NF min ) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which pr...

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Veröffentlicht in:	IEEE electron device letters 2005-07, Vol.26 (7), p.489-491
Hauptverfasser:	Kao, H.L., Chin, A., Hung, B.F., Lee, C.F., Lai, J.M., McAlister, S.P., Samudra, G.S., Won Jong Yoo, Chi, C.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Associated gain Coplanar transmission lines Coplanar waveguides Councils Devices Drains Electronics Exact sciences and technology Flexing Gain Low noise MOSFET MOSFETs Noise figure Noise levels Noise measurement Plasma measurements plastic Plastics Radio frequencies Radio frequency RF noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tensile strain Transistors
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Zusammenfassung:	We report a low minimum noise figure (NF min ) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NF min to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (L/sub g/=80 nm) devices.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2005.851238