A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology

A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum noise figure of 3.9 dB at 24.3 GHz. The supply voltage and supply current are 1 V and 14 mA, respectively. To the author's k...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2005-07, Vol.15 (7), p.448-450
Hauptverfasser:	Shin, S.-C., Ming-Da Tsai, Ren-Chieh Liu, Lin, K.-Y., Wang, Huei
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Circuits CMOS CMOS process CMOS technology Electric, optical and optoelectronic circuits Electronics Exact sciences and technology k-band low noise amplifier (LNA) Low-noise amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits microwave monolithic integrated circuit (MMIC) Noise figure Noise measurement Performance gain Radio frequency Semiconductor device modeling Voltage
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Beschreibung
Zusammenfassung:	A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum noise figure of 3.9 dB at 24.3 GHz. The supply voltage and supply current are 1 V and 14 mA, respectively. To the author's knowledge, this LNA demonstrates the lowest noise figure among the reported LNAs in standard CMOS processes above 20 GHz.
ISSN:	1531-1309 1558-1764
DOI:	10.1109/LMWC.2005.851552