A new method for precise evaluation of dynamic recovery of negative bias temperature instability

A new method for precise evaluation of dynamic recovery of negative bias temperature instability

It has been reported that the dynamic recovery of drain current (I/sub d/) takes place soon after the stress applied on the gate is removed during a MOSFET negative bias temperature instability (NBTI) experiment. This phenomenon makes it very difficult to estimate the NBTI degradation of I/sub d/ (/...

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Hauptverfasser: Aota, S., Fujii, S., Jin, Z.W., Ito, Y., Utsumi, K., Morifuji, E., Yamada, S., Matsuoka, F., Noguchi, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Insulation
Large scale integration
MOSFETs
Negative bias temperature instability
Niobium compounds
Stress measurement
Time measurement
Titanium compounds
Voltage
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Beschreibung
Zusammenfassung:It has been reported that the dynamic recovery of drain current (I/sub d/) takes place soon after the stress applied on the gate is removed during a MOSFET negative bias temperature instability (NBTI) experiment. This phenomenon makes it very difficult to estimate the NBTI degradation of I/sub d/ (/spl Delta/I/sub d/) correctly. The paper presents a new characterization method in which the effect of the dynamic recovery is quantitatively taken into account to estimate /spl Delta/I/sub d/ precisely.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2005.1452262