Novel realistic short structure construction for parasitic resistance de-embedding and on-wafer inductor characterization

Novel realistic short structure construction for parasitic resistance de-embedding and on-wafer inductor characterization

The paper presents a novel method of using measured S-parameters of a through structure to construct the Z-parameters of a realistic short structure. By using this realistic short structure for parasitic resistance de-embedding, an on-wafer inductor has been characterized, and inductor parameters (Q...

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Hauptverfasser: Tao, J., Findley, P., Rezvani, G.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrical resistance measurement
Inductance
Inductors
Parasitic capacitance
Performance evaluation
Probes
Q factor
Radio frequency
Scattering parameters
Testing
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Findley, P.
Rezvani, G.A.
description The paper presents a novel method of using measured S-parameters of a through structure to construct the Z-parameters of a realistic short structure. By using this realistic short structure for parasitic resistance de-embedding, an on-wafer inductor has been characterized, and inductor parameters (Q, L and R) have been accurately extracted.
doi_str_mv 10.1109/ICMTS.2005.1452260
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2158-1029
language eng
recordid cdi_ieee_primary_1452260
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Electrical resistance measurement
Inductance
Inductors
Parasitic capacitance
Performance evaluation
Probes
Q factor
Radio frequency
Scattering parameters
Testing
title Novel realistic short structure construction for parasitic resistance de-embedding and on-wafer inductor characterization
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