Novel realistic short structure construction for parasitic resistance de-embedding and on-wafer inductor characterization

Novel realistic short structure construction for parasitic resistance de-embedding and on-wafer inductor characterization

The paper presents a novel method of using measured S-parameters of a through structure to construct the Z-parameters of a realistic short structure. By using this realistic short structure for parasitic resistance de-embedding, an on-wafer inductor has been characterized, and inductor parameters (Q...

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Bibliographische Detailangaben
Hauptverfasser: Tao, J., Findley, P., Rezvani, G.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrical resistance measurement
Inductance
Inductors
Parasitic capacitance
Performance evaluation
Probes
Q factor
Radio frequency
Scattering parameters
Testing
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Beschreibung
Zusammenfassung:The paper presents a novel method of using measured S-parameters of a through structure to construct the Z-parameters of a realistic short structure. By using this realistic short structure for parasitic resistance de-embedding, an on-wafer inductor has been characterized, and inductor parameters (Q, L and R) have been accurately extracted.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2005.1452260