Improved performance of X-band TRAPATT's

Improved performance of X-band TRAPATT's

Silicon TRAPATT diodes have been operated at over 40-percent efficiency in X band. This improved efficiency has been associated with steep doping gradients at the epitaxial layer substrate interface and low parasitic series resistances of the high-performance diodes.

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Bibliographische Detailangaben
Veröffentlicht in:Proceedings of the IEEE 1972-01, Vol.60 (11), p.1443-1444
Hauptverfasser: Grace, M.I., Kroger, H., Telio, J.
Format: Artikel
Sprache:eng
Schlagworte:
Diodes
Doping
Epitaxial layers
Filters
Frequency
Oscillators
Packaging
Passband
Substrates
Varactors
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Beschreibung
Zusammenfassung:Silicon TRAPATT diodes have been operated at over 40-percent efficiency in X band. This improved efficiency has been associated with steep doping gradients at the epitaxial layer substrate interface and low parasitic series resistances of the high-performance diodes.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1972.8921