A comparative study of IMPATT diode noise properties

A comparative study of IMPATT diode noise properties

The amplifier and oscillator noise properties of IMPATT diodes fabricated with diffused and epitaxial p + -n junctions in both Si and GaAs have been measured. Circuit parameters which effect noise have been held constant in order to obtain a valid comparison. The GaAs epitaxially grown junction p +...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Proceedings of the IEEE 1972-01, Vol.60 (6), p.745-746
Hauptverfasser: Levine, P.A., Chan, V.W.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit noise
Dielectric losses
Diodes
Gallium arsenide
Light scattering
Optical amplifiers
Optical films
Optical noise
Optical scattering
Optical waveguides
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The amplifier and oscillator noise properties of IMPATT diodes fabricated with diffused and epitaxial p + -n junctions in both Si and GaAs have been measured. Circuit parameters which effect noise have been held constant in order to obtain a valid comparison. The GaAs epitaxially grown junction p + -n diodes were found to have the best noise properties.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1972.8754