Behavior of ZnO acoustoelectric devices under uniaxial pressure
The effects of uniaxial pressure along the c axis of zinc oxide acoustoelectric single crystals while biased below and above the threshold field are discussed.
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| Veröffentlicht in: | Proceedings of the IEEE 1971, Vol.59 (12), p.1709-1710 |
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| container_end_page | 1710 |
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| container_issue | 12 |
| container_start_page | 1709 |
| container_title | Proceedings of the IEEE |
| container_volume | 59 |
| creator | Aggarwal, D. Jaskolski, S.V. |
| description | The effects of uniaxial pressure along the c axis of zinc oxide acoustoelectric single crystals while biased below and above the threshold field are discussed. |
| doi_str_mv | 10.1109/PROC.1971.8526 |
| format | Article |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9219 |
| ispartof | Proceedings of the IEEE, 1971, Vol.59 (12), p.1709-1710 |
| issn | 0018-9219 1558-2256 |
| language | eng |
| recordid | cdi_ieee_primary_1450456 |
| source | IEEE Electronic Library (IEL) |
| subjects | Acoustoelectric devices Bars Circuits Conductivity Crystals Oscillators Piezoelectric devices Semiconductivity Semiconductor devices Zinc oxide |
| title | Behavior of ZnO acoustoelectric devices under uniaxial pressure |
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