Behavior of ZnO acoustoelectric devices under uniaxial pressure

Behavior of ZnO acoustoelectric devices under uniaxial pressure

The effects of uniaxial pressure along the c axis of zinc oxide acoustoelectric single crystals while biased below and above the threshold field are discussed.

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Bibliographische Detailangaben
Veröffentlicht in:Proceedings of the IEEE 1971, Vol.59 (12), p.1709-1710
Hauptverfasser: Aggarwal, D., Jaskolski, S.V.
Format: Artikel
Sprache:eng
Schlagworte:
Acoustoelectric devices
Bars
Circuits
Conductivity
Crystals
Oscillators
Piezoelectric devices
Semiconductivity
Semiconductor devices
Zinc oxide
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Zusammenfassung:The effects of uniaxial pressure along the c axis of zinc oxide acoustoelectric single crystals while biased below and above the threshold field are discussed.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1971.8526