Fabrication and noise performance of high-power GaAs IMPATTS

Fabrication and noise performance of high-power GaAs IMPATTS

Schottky-barrier GaAs IMPATT diodes have been fabrirated in a double epitaxial layer structure on low-etch-pit density substrates. The resulting low defect density in the active region permits high power outputs and low noise measure. Mounted on copper studs and a 20°C heat sink, such diodes have gi...

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Veröffentlicht in:Proceedings of the IEEE 1971-01, Vol.59 (8), p.1212-1215
Hauptverfasser: Irvin, J.C., Coleman, D.J., Johnson, W.A., Tatsuguchi, I., Decker, D.R., Dunn, C.N.
Format: Artikel
Sprache:eng
Schlagworte:
Active noise reduction
Copper
Density measurement
Epitaxial layers
Fabrication
Gallium arsenide
Noise measurement
Power measurement
Schottky diodes
Substrates
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Zusammenfassung:Schottky-barrier GaAs IMPATT diodes have been fabrirated in a double epitaxial layer structure on low-etch-pit density substrates. The resulting low defect density in the active region permits high power outputs and low noise measure. Mounted on copper studs and a 20°C heat sink, such diodes have given a maximum CW power output of 2.94 W at 6.1 GHz with 13.8 percent efficiency. The small-signal amplifier noise measure was 25dB. Operated as injection-locked oscillators, the noise measure was 32 dB at an output of 1 W. These results show that in a suitable structure, GaAs can surpass the efficiency and noise performance of other materials, and demonstrate the capability of high power output in this frequency band.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1971.8366