GaAs Schottky diodes with near-ideal characteristics

GaAs Schottky diodes with near-ideal characteristics

The I-V characteristics of some GaAs Schottky-barrier IMPATT diodes are found to be nearly ideal at operating temperatures (∼200°C). Fabricated on epitaxial n-type substrate with platinum contacts, the diodes use a truncated cone shape to avoid soft breakdown. The breakdown voltage and its temperatu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Proceedings of the IEEE 1971-01, Vol.59 (7), p.1121-1122
Hauptverfasser: Coleman, D.J., Irvin, J.C., Sze, S.M.
Format: Artikel
Sprache:eng
Schlagworte:
Avalanche breakdown
Capacitance
Electrodes
Gallium arsenide
Schottky barriers
Schottky diodes
Semiconductor diodes
Shape
Substrates
Temperature dependence
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The I-V characteristics of some GaAs Schottky-barrier IMPATT diodes are found to be nearly ideal at operating temperatures (∼200°C). Fabricated on epitaxial n-type substrate with platinum contacts, the diodes use a truncated cone shape to avoid soft breakdown. The breakdown voltage and its temperature dependence are close to calculated values for one-sided abrupt junctions.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1971.8344