A 1 to 2 µm silicon avalanche photodiode

A 1 to 2 µm silicon avalanche photodiode

Avalanche photodetection at wavelengths beyond the silicon band edge has been observed in palladium-silicon Schottky diodes. The devices are analogous to vacuum photomultipliers in that photo-excitation and gain take place in separata regions of the diode. Quantum efficiencias of 0.75 percent and av...

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Veröffentlicht in:Proceedings of the IEEE 1970, Vol.58 (7), p.1160-1162
Hauptverfasser: Shepherd, F.D., Yang, A.C., Taylor, R.W.
Format: Artikel
Sprache:eng
Schlagworte:
Avalanche photodiodes
Electromagnetic heating
High power microwave generation
Nitrogen
Pulse circuits
Pulse generation
Pulsed power supplies
Schottky diodes
Silicon
Temperature
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Zusammenfassung:Avalanche photodetection at wavelengths beyond the silicon band edge has been observed in palladium-silicon Schottky diodes. The devices are analogous to vacuum photomultipliers in that photo-excitation and gain take place in separata regions of the diode. Quantum efficiencias of 0.75 percent and avalanche multiplications > 200 have been observed at 1.3 µm.
ISSN:0018-9219
DOI:10.1109/PROC.1970.7880