High power semiconductor laser injection-locking at 1.3 mu m
The injection-locking properties of a high power antireflection coated 1.3- mu m slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation ( approximately 40 kHz) was de...
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| Veröffentlicht in: | Journal of lightwave technology 1992-07, Vol.10 (7), p.903-907 |
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| container_end_page | 907 |
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| container_issue | 7 |
| container_start_page | 903 |
| container_title | Journal of lightwave technology |
| container_volume | 10 |
| creator | Andrekson, P.A. Olsson, N.A. Tanbun-Ek, T. Washington, M.A. |
| description | The injection-locking properties of a high power antireflection coated 1.3- mu m slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation ( approximately 40 kHz) was demonstrated and the tuning range within two slave modes ( approximately 10 GHz) and over the gain profile ( approximately 40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 mu W was injected into the slave.< > |
| doi_str_mv | 10.1109/50.144911 |
| format | Article |
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Narrow linewidth operation ( approximately 40 kHz) was demonstrated and the tuning range within two slave modes ( approximately 10 GHz) and over the gain profile ( approximately 40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 mu W was injected into the slave.< ></description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/50.144911</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Distributed feedback devices ; Exact sciences and technology ; Frequency ; Fundamental areas of phenomenology (including applications) ; Laser feedback ; Laser mode locking ; Laser modes ; Laser tuning ; Lasers ; Optics ; Phase modulation ; Physics ; Power lasers ; Semiconductor lasers ; Semiconductor lasers; laser diodes ; Tunable circuits and devices</subject><ispartof>Journal of lightwave technology, 1992-07, Vol.10 (7), p.903-907</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c275t-b03b1d3a76fd3041beff4068ba2beac34148b46a99e486812cce3973f3ba6e123</citedby><cites>FETCH-LOGICAL-c275t-b03b1d3a76fd3041beff4068ba2beac34148b46a99e486812cce3973f3ba6e123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/144911$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/144911$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5567154$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Andrekson, P.A.</creatorcontrib><creatorcontrib>Olsson, N.A.</creatorcontrib><creatorcontrib>Tanbun-Ek, T.</creatorcontrib><creatorcontrib>Washington, M.A.</creatorcontrib><title>High power semiconductor laser injection-locking at 1.3 mu m</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>The injection-locking properties of a high power antireflection coated 1.3- mu m slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation ( approximately 40 kHz) was demonstrated and the tuning range within two slave modes ( approximately 10 GHz) and over the gain profile ( approximately 40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 mu W was injected into the slave.< ></description><subject>Distributed feedback devices</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Laser feedback</subject><subject>Laser mode locking</subject><subject>Laser modes</subject><subject>Laser tuning</subject><subject>Lasers</subject><subject>Optics</subject><subject>Phase modulation</subject><subject>Physics</subject><subject>Power lasers</subject><subject>Semiconductor lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Tunable circuits and devices</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNpFjztLBDEURoMouK4WtlYpbCxGc_OYZMBGFnWFBRuthyR7s2adx5LMIv57R0e0OnA598BHyDmwawBW3aiRUlYAB2QGSpmCcxCHZMa0EIXRXB6Tk5y3jI2W0TNyu4ybN7rrPzDRjG30fbfe-6FPtLF5vMVui36IfVc0vX-P3YbagcK1oO2etqfkKNgm49kv5-T14f5lsSxWz49Pi7tV4blWQ-GYcLAWVpdhLZgEhyFIVhpnuUPrhQRpnCxtVaE0pQHuPYpKiyCcLRG4mJOrqetTn3PCUO9SbG36rIHV37NrNfJn9uheTu7OZm-bkGznY_57UKrUoOSoXUxaRMT_3NT4ApRDXf0</recordid><startdate>19920701</startdate><enddate>19920701</enddate><creator>Andrekson, P.A.</creator><creator>Olsson, N.A.</creator><creator>Tanbun-Ek, T.</creator><creator>Washington, M.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19920701</creationdate><title>High power semiconductor laser injection-locking at 1.3 mu m</title><author>Andrekson, P.A. ; Olsson, N.A. ; Tanbun-Ek, T. ; Washington, M.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c275t-b03b1d3a76fd3041beff4068ba2beac34148b46a99e486812cce3973f3ba6e123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Distributed feedback devices</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Laser feedback</topic><topic>Laser mode locking</topic><topic>Laser modes</topic><topic>Laser tuning</topic><topic>Lasers</topic><topic>Optics</topic><topic>Phase modulation</topic><topic>Physics</topic><topic>Power lasers</topic><topic>Semiconductor lasers</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Tunable circuits and devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andrekson, P.A.</creatorcontrib><creatorcontrib>Olsson, N.A.</creatorcontrib><creatorcontrib>Tanbun-Ek, T.</creatorcontrib><creatorcontrib>Washington, M.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Andrekson, P.A.</au><au>Olsson, N.A.</au><au>Tanbun-Ek, T.</au><au>Washington, M.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High power semiconductor laser injection-locking at 1.3 mu m</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>1992-07-01</date><risdate>1992</risdate><volume>10</volume><issue>7</issue><spage>903</spage><epage>907</epage><pages>903-907</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>The injection-locking properties of a high power antireflection coated 1.3- mu m slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation ( approximately 40 kHz) was demonstrated and the tuning range within two slave modes ( approximately 10 GHz) and over the gain profile ( approximately 40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 mu W was injected into the slave.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/50.144911</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0733-8724 |
| ispartof | Journal of lightwave technology, 1992-07, Vol.10 (7), p.903-907 |
| issn | 0733-8724 1558-2213 |
| language | eng |
| recordid | cdi_ieee_primary_144911 |
| source | IEEE Electronic Library (IEL) |
| subjects | Distributed feedback devices Exact sciences and technology Frequency Fundamental areas of phenomenology (including applications) Laser feedback Laser mode locking Laser modes Laser tuning Lasers Optics Phase modulation Physics Power lasers Semiconductor lasers Semiconductor lasers laser diodes Tunable circuits and devices |
| title | High power semiconductor laser injection-locking at 1.3 mu m |
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