High power semiconductor laser injection-locking at 1.3 mu m

The injection-locking properties of a high power antireflection coated 1.3- mu m slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation ( approximately 40 kHz) was demonstrated and the tuning range within two slave modes ( approximately 10 GHz) and over the gain profile ( approximately 40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 mu W was injected into the slave.< >