SB-IGFET, II: An ion implanted IGFET using Schottky barriers

Insulated-gate field-effect transistors have been made, which combine the advantages inherent to Schottky barrier source and drain electrodes with ion implantation. This device has a self-aligned gate structure achieved by using the thick gate electrode as a mask during the ion implantation process.

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Bibliographische Detailangaben
Veröffentlicht in:	Proc. IEEE (Inst. Elec. Electron. Eng.), 57: 812-13 (May 1969) 57: 812-13 (May 1969), 1969, Vol.57 (5), p.812-813
Hauptverfasser:	Lepselter, M.P., MacRae, A.U., MacDonald, R.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	BARRIERS BEAMS BOMBARDMENT Boron CRYSTALS CURRENTS ELECTRIC CHARGES ELECTRIC FIELDS Electrodes FABRICATION FETs FIELD EFFECT TRANSISTORS Geometry IMPURITIES ION BEAMS ION IMPLANTATION N26400 -Instrumentation-Miscellaneous Instruments & Components Platinum Pulse circuits Schottky barriers Schottky diodes SCHOTTKY EFFECT Silicides THERMIONICS TRANSISTORS TRANSISTORS/characteristics of ion implanted insulated-gate FET using Schottky barriers TRANSISTORS/fabrication of ion implanted insulated- gate FET using Schottky barriers WORK FUNCTION
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Beschreibung
Zusammenfassung:	Insulated-gate field-effect transistors have been made, which combine the advantages inherent to Schottky barrier source and drain electrodes with ion implantation. This device has a self-aligned gate structure achieved by using the thick gate electrode as a mask during the ion implantation process.
ISSN:	0018-9219
DOI:	10.1109/PROC.1969.7089