Charge storage in metal-silicon nitride-silicon capacitors
Charge storage in MNS capacitors is presented as a function of time with temperature as a parameter. Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters.
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| Veröffentlicht in: | Proceedings of the IEEE 1967-01, Vol.55 (8), p.1494-1495 |
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| container_end_page | 1495 |
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| container_issue | 8 |
| container_start_page | 1494 |
| container_title | Proceedings of the IEEE |
| container_volume | 55 |
| creator | Hutchins, C.L. Lade, R.W. |
| description | Charge storage in MNS capacitors is presented as a function of time with temperature as a parameter. Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters. |
| doi_str_mv | 10.1109/PROC.1967.5861 |
| format | Article |
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Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1967.5861</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0018-9219 |
| ispartof | Proceedings of the IEEE, 1967-01, Vol.55 (8), p.1494-1495 |
| issn | 0018-9219 1558-2256 |
| language | eng |
| recordid | cdi_ieee_primary_1447791 |
| source | IEEE Electronic Library (IEL) |
| subjects | Capacitors Degradation Magnetic flux Pulse measurements Silicon Superconducting films Superconducting magnets Superconductivity Transistors Writing |
| title | Charge storage in metal-silicon nitride-silicon capacitors |
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