Charge storage in metal-silicon nitride-silicon capacitors

Charge storage in metal-silicon nitride-silicon capacitors

Charge storage in MNS capacitors is presented as a function of time with temperature as a parameter. Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters.

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Veröffentlicht in:Proceedings of the IEEE 1967-01, Vol.55 (8), p.1494-1495
Hauptverfasser: Hutchins, C.L., Lade, R.W.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitors
Degradation
Magnetic flux
Pulse measurements
Silicon
Superconducting films
Superconducting magnets
Superconductivity
Transistors
Writing
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Beschreibung
Zusammenfassung:Charge storage in MNS capacitors is presented as a function of time with temperature as a parameter. Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1967.5861