Room temperature Lorentz field induced recombination radiation in InSb and CdxHg1-xTe
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| Veröffentlicht in: | Proceedings of the IEEE 1966-11, Vol.54 (11), p.1597-1598 |
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| container_end_page | 1598 |
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| container_issue | 11 |
| container_start_page | 1597 |
| container_title | Proceedings of the IEEE |
| container_volume | 54 |
| creator | Flynn, J.B. Schlickman, J.J. |
| description | |
| doi_str_mv | 10.1109/PROC.1966.5214 |
| format | Article |
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| identifier | ISSN: 0018-9219 |
| ispartof | Proceedings of the IEEE, 1966-11, Vol.54 (11), p.1597-1598 |
| issn | 0018-9219 1558-2256 |
| language | eng |
| recordid | cdi_ieee_primary_1447144 |
| source | IEEE |
| subjects | Electron mobility Frequency Indium Luminescence Magnetic fields Microwave generation Plasma stability Plasma temperature Radiative recombination Voltage |
| title | Room temperature Lorentz field induced recombination radiation in InSb and CdxHg1-xTe |
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