Electrical properties of orientation-mismatched interface of (311)B InP/(100) GaAs, and the effect of surface preparation methods

We investigated electrical conductivity across orientation- and lattice mismatched interface formed by wafer bonding. An interface of (311)B InP and (100) GaAs wafer had a barrier height (Vb) of about 0.5 eV, which was higher than that of a bonded interface of (100) InP/(100) GaAs due to an orientation mismatch. The effect of surface treatment method before the bonding process was also investigated, and it was shown that the Vb is lower for the interface formed by bonding wafers with dry surface. Although the Vb was high for the (311)B InP/(100) GaAs interface, it had a decent conductivity, and we believe that such an integrated structure is beneficial for fabricating new types of devices such as long-wavelength VCSEL with polarization control.