An InP/InGaAs tunnel junction fabricated on (311)B InP substrate by MOCVD

We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapour deposition (MOCVD) using metalorganic group-V regents. For both n-type Si-doping and p-type Zn-doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane, a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Okuno, Y.L., DenBaars, S.P., Bowers, J.E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition Crystalline materials Doping Electronics Exact sciences and technology Indium gallium arsenide Indium phosphide Inductors Microelectronic fabrication (materials and surfaces technology) MOCVD Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Surface morphology Vertical cavity surface emitting lasers
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapour deposition (MOCVD) using metalorganic group-V regents. For both n-type Si-doping and p-type Zn-doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane, and that we can dope both n-type and p-type layers more than 10/sup 19/ cm/sup -3/ at the same growth condition. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The as-grown junction showed good current-voltage characteristics and is promising for device applications.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2004.1442624