A study of the static and multigigabit dynamic effects of gain spectra carrier dependence in semiconductor lasers using a transmission-line laser model

A study of the static and multigigabit dynamic effects of gain spectra carrier dependence in semiconductor lasers using a transmission-line laser model

The addition of carrier diffusion and gain curve peak carrier dependence to the transmission-line laser model allows the study of both the temporal and the spectral effects of this dependence. The model, including a photodiode model, is described and results for a static 860-nm device and an 8-Gb/s...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE J. Quant. Electron.; (United States) 1988-12, Vol.24 (12), p.2376-2385
1. Verfasser: Lowery, A.J.
Format: Artikel
Sprache:eng
Schlagworte:
420300 - Engineering- Lasers- (-1989)
AMPLIFICATION
ANALYTICAL SOLUTION
CARRIER DENSITY
DATA
DIFFUSION
ENGINEERING
Equations
Exact sciences and technology
EXPERIMENTAL DATA
Fundamental areas of phenomenology (including applications)
GAIN
INFORMATION
Laser modes
Laser noise
LASERS
NUMERICAL DATA
NUMERICAL SOLUTION
Optical design
Optical materials
Optical pulse shaping
Optical scattering
Optics
PHOTODIODES
Physics
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SPECTRA
Transmission lines
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Beschreibung
Zusammenfassung:The addition of carrier diffusion and gain curve peak carrier dependence to the transmission-line laser model allows the study of both the temporal and the spectral effects of this dependence. The model, including a photodiode model, is described and results for a static 860-nm device and an 8-Gb/s bit-sequence-modulated 1550-nm constricted-mesa device compare favorably with the previously obtained numerical, analytical, and experimental data.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.14366