Decrease in interface states density of 4H-SiC MOS under high electric field stress

Decrease in interface states density of 4H-SiC MOS under high electric field stress

An Al/SiO/sub 2//4H-SiC metal-insulator-semiconductor (MOS) structure has been characterized using high frequency C-V measurements. By subjecting the MOS to high electric field stress (6 MV/cm), the flat-band voltage and effective oxide charge have been found to increase with stress time. In contras...

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Bibliographische Detailangaben
Hauptverfasser: Zhao, P., Rusli, Tin, C.C., Yoon, S.F., Zhu, W.G., Ahn, J., Ligatchev, V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Capacitance-voltage characteristics
Frequency
Hafnium
Interface states
MOS capacitors
Oxidation
Silicon carbide
Stress
Voltage
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Zusammenfassung:An Al/SiO/sub 2//4H-SiC metal-insulator-semiconductor (MOS) structure has been characterized using high frequency C-V measurements. By subjecting the MOS to high electric field stress (6 MV/cm), the flat-band voltage and effective oxide charge have been found to increase with stress time. In contrast, there is a decrease in the interface states density upon the electric field stress. The results can be explained by electron trapping in the complicated intermediary interfacial layer between SiO/sub 2/ and 4H-SiC.
DOI:10.1109/ICSICT.2004.1435308