Challenges of DRAM and flash scaling - potentials in advanced emerging memory devices

Dynamic random access memory (DRAM) and Flash nonvolatile memory (NVM) continue lo be scaled down to sub-90nm dimensions, a trend expected to extend through the next few generations. Difficulties, however, arise in both device and process technology for sub-65nm geometries in both types of memory. T...

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Bibliographische Detailangaben

1. Verfasser:	Tran, L.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Ambient intelligence Capacitors EPROM Geometry High K dielectric materials Nonvolatile memory Random access memory Read only memory Scanning electron microscopy Switches
Online-Zugang:	Volltext bestellen
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