Challenges of DRAM and flash scaling - potentials in advanced emerging memory devices

Dynamic random access memory (DRAM) and Flash nonvolatile memory (NVM) continue lo be scaled down to sub-90nm dimensions, a trend expected to extend through the next few generations. Difficulties, however, arise in both device and process technology for sub-65nm geometries in both types of memory. T...

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Bibliographische Detailangaben
1. Verfasser:	Tran, L.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Ambient intelligence Capacitors EPROM Geometry High K dielectric materials Nonvolatile memory Random access memory Read only memory Scanning electron microscopy Switches
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Beschreibung
Zusammenfassung:	Dynamic random access memory (DRAM) and Flash nonvolatile memory (NVM) continue lo be scaled down to sub-90nm dimensions, a trend expected to extend through the next few generations. Difficulties, however, arise in both device and process technology for sub-65nm geometries in both types of memory. This paper analyzes these challenges and presents emerging device candidates with their potentials for high volume realization and opportunities for research and development in this area.
DOI:	10.1109/ICSICT.2004.1435093