Measurement of source coupled logic "exclusive OR" circuit ring oscillator of SOI Si vertical dual carrier field effect transistor with effective channel length of 5-30nm

Measurement of source coupled logic "exclusive OR" circuit ring oscillator of SOI Si vertical dual carrier field effect transistor with effective channel length of 5-30nm

Source coupled logic (SCL) flip flops of SOI Si "vertical dual carrier field effect transistor" (VDCFET) with effective channel length of 5-30nm have been designed, fabricated and measured. These development works are presented in three accompanied papers submitted to this conference. Pres...

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Hauptverfasser: Tang, Z.M., Li, G.H., Yang, R., Xu, Y.Z., Yang, Y.H., Huang, D.H., Xu, P., Shen, S.G., Lin, C.L., Yan, F.Z., Han, D.J., Tien, X.N., Ji, Y.Z., Du, D.S., Huang, C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Central Processing Unit
Circuit optimization
Coupling circuits
FETs
Length measurement
Logic circuits
Resistors
Ring oscillators
System-on-a-chip
Voltage-controlled oscillators
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Zusammenfassung:Source coupled logic (SCL) flip flops of SOI Si "vertical dual carrier field effect transistor" (VDCFET) with effective channel length of 5-30nm have been designed, fabricated and measured. These development works are presented in three accompanied papers submitted to this conference. Presented in this paper are the measured circuit performance of source coupled logic (SCL) CPU switching circuits of SOI Si VDCFET with effective channel length of 5-30 nm, including ring oscillators and "exclusive OR" circuits.
DOI:10.1109/ICSICT.2004.1434958