CMOS versus SiGe BiCMOS: historical technology bipolarization of silicon integrated transceivers

CMOS versus SiGe BiCMOS: historical technology bipolarization of silicon integrated transceivers

Part of the challenge, when issuing transceiver chips for the telecommunication market today, is not only to make a consistent choice between a set standards, but also to choose the adequate technology. Depending on the standards characteristics and the proposed architecture the choice can lead eith...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Saias, D., Belot, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
CMOS technology
Germanium silicon alloys
Isolation technology
Mobile handsets
Radio frequency
Silicon germanium
Telecommunication standards
Transceivers
Very large scale integration
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Beschreibung
Zusammenfassung:Part of the challenge, when issuing transceiver chips for the telecommunication market today, is not only to make a consistent choice between a set standards, but also to choose the adequate technology. Depending on the standards characteristics and the proposed architecture the choice can lead either to system on chip or to system on module solutions.
DOI:10.1109/ICM.2004.1434222