Low-threshold operation of 1.34-μm GaInNAs VCSEL grown by MOVPE

Low-threshold operation was demonstrated for a 1.34-μm vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that osci...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2005-05, Vol.17 (5), p.950-952
Hauptverfasser:	Yamada, M., Anan, T., Hatakeyama, H., Tokutome, K., Suzuki, N., Nakamura, T., Nishi, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Coarse wavelength-division multiplexing (CWDM) Degradation Density Distributed feedback devices Epitaxial growth Epitaxial layers GaInNAs Indium Lasers Lasing metal-organic vapor-phase epitaxy (MOVPE) Nitrogen Optical surface waves Optimization Quantum wells Surface emitting lasers Temperature Threshold currents Vertical cavity surface emission lasers Vertical cavity surface emitting lasers vertical-cavity surface-emitting laser (VCSEL) Wavelengths
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Low-threshold operation was demonstrated for a 1.34-μm vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm 2 at 1.34 μm and 1.1 kA/cm 2 at 1.38 μm, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 μm at room temperature and operated up to 60/spl deg/C.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2005.844325