TES anthradithiophene solution-processed OTFTs with 1 cm/sup 2//V-s mobility

TES anthradithiophene solution-processed OTFTs with 1 cm/sup 2//V-s mobility

We have fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl anthradithiophene (TES anthradithiophene) with 1 cm/sup 2//V-s mobility. The devices also have current on/off ratio > 107 and subthreshold slope near 1 V/decade. To our knowledge, these are t...

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Bibliographische Detailangaben
Hauptverfasser: Chung-Chen Kuo, Payne, M.M., Anthony, J.E., Jackson, T.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Blades
Casting
Crystalline materials
Dielectric substrates
Dip coating
Organic semiconductors
Organic thin film transistors
Semiconductor films
Solvents
Thin film transistors
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Zusammenfassung:We have fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl anthradithiophene (TES anthradithiophene) with 1 cm/sup 2//V-s mobility. The devices also have current on/off ratio > 107 and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution-processed OTFTs reported to date and the first with performance comparable to thermally evaporated pentacene devices.
DOI:10.1109/IEDM.2004.1419161