The influence of microwave two-port noise on residual phase noise in GaAs-HBTs

We present residual phase noise measurements of GaInP/GaAs HBTs, which are widely used as gain elements in microwave MMIC oscillators. These measurements allow to separate the influence of the noise sources on oscillator phase noise. It turns out that the microwave noise of the device near the oscil...

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Bibliographische Detailangaben
Hauptverfasser:	Rudolph, M., Heymann, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Additive noise Circuit noise Frequency Gallium arsenide Heterojunction bipolar transistors Microwave devices Microwave oscillators Microwave transistors MMICs Phase noise
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Beschreibung
Zusammenfassung:	We present residual phase noise measurements of GaInP/GaAs HBTs, which are widely used as gain elements in microwave MMIC oscillators. These measurements allow to separate the influence of the noise sources on oscillator phase noise. It turns out that the microwave noise of the device near the oscillation frequency is an important source of phase noise for offset frequencies ⩾ 100kHz. Simulation results based on a transistor noise-model show good agreement with experimental results.