Precise simulation of LDMOS temperature effects using tricubic spline functions

Precise simulation of LDMOS temperature effects using tricubic spline functions

Power transistor devices such as LDMOS change their behavior during operation due to self heating effects. This effect is often described using functional descriptions [l] for the N output characteristics. In this paper we show the limits of this approach. Furthermore, we present an efficient extrac...

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Hauptverfasser: Follmann, R., Kother, D., Stahlmann, R., Wolff, I., Gajadbarsing, J., Versleijen, M., Sveshtarov, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit simulation
Current measurement
Electrical resistance measurement
Equations
Equivalent circuits
Heating
Pulse measurements
Spline
Temperature
Thermal resistance
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Zusammenfassung:Power transistor devices such as LDMOS change their behavior during operation due to self heating effects. This effect is often described using functional descriptions [l] for the N output characteristics. In this paper we show the limits of this approach. Furthermore, we present an efficient extraction and simulation method describing self-beating based on tricubic spline functions.