Improved drift in two-phase, long-channel, shallow buried-channel CCDs with longitudinally nonuniform storage-gate implants

Improved drift in two-phase, long-channel, shallow buried-channel CCDs with longitudinally nonuniform storage-gate implants

Two-phase buried-channel charge-coupled devices (CCDs) with a gradient in the storage wells, generated by a nonuniform channel doping parallel to the surface, were studied at room temperature and at 77 K. The built-in drift fields improve the charge transfer efficiency by more than an order of magni...

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Veröffentlicht in:IEEE transactions on electron devices 1992-07, Vol.39 (7), p.1772-1774
Hauptverfasser: Lattes, A.L., Munroe, S.C., Seaver, M.M., Murguia, J.E., Melngailis, J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Charge coupled devices
Charge transfer
Charge transfer devices
Clocks
Computer science
Doping
Electronics
Electrons
Exact sciences and technology
Implants
Laboratories
Potential well
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
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Beschreibung
Zusammenfassung:Two-phase buried-channel charge-coupled devices (CCDs) with a gradient in the storage wells, generated by a nonuniform channel doping parallel to the surface, were studied at room temperature and at 77 K. The built-in drift fields improve the charge transfer efficiency by more than an order of magnitude, consistently with two-dimensional simulations.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.141248